发明授权
- 专利标题： Method for manufacturing mask
- 专利标题（中）： 掩模制造方法
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申请号： US12954448申请日： 2010-11-24
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公开(公告)号： US08138094B2公开(公告)日： 2012-03-20
- 发明人: Mitsunari Sukekawa
- 申请人： Mitsunari Sukekawa
- 申请人地址： JP Tokyo
- 专利权人： Elpida Memory, Inc.
- 当前专利权人： Elpida Memory, Inc.
- 当前专利权人地址： JP Tokyo
- 代理机构： Sughrue Mion, PLLC
- 优先权： JP2009-295206 20091225
- 主分类号： H01L21/027
- IPC分类号： H01L21/027
摘要：
Openings are formed in first and second mask layers. Next, diameter of the opening in the second mask layer is enlarged so that the diameter of the opening in the second mask layer becomes larger by a length X than diameter of the opening in the first mask layer. Thereafter, mask material is formed into the opening in the second mask layer, to form a cavity with a diameter X within the opening in the second mask layer. There is formed a mask which includes the second mask layer and the mask material having therein opening including the cavity.
公开/授权文献
- US20110159695A1 METHOD FOR MANUFACTURING MASK 公开/授权日：2011-06-30
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