发明授权
- 专利标题： Wire electric discharge machining method, semiconductor wafer manufacturing method, and solar battery cell manufacturing method
- 专利标题（中）： 线放电加工方法，半导体晶片制造方法和太阳能电池单元制造方法
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申请号： US12093836申请日： 2005-11-16
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公开(公告)号： US08138442B2公开(公告)日： 2012-03-20
- 发明人: Tatsushi Sato , Yoshihito Imai , Teiji Takahashi , Takeshi Sakata , Tomoko Sendai , Yoichiro Nishimoto , Shigeru Matsuno , Takeyuki Maegawa , Takaaki Iwata
- 申请人： Tatsushi Sato , Yoshihito Imai , Teiji Takahashi , Takeshi Sakata , Tomoko Sendai , Yoichiro Nishimoto , Shigeru Matsuno , Takeyuki Maegawa , Takaaki Iwata
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Electric Corporation
- 当前专利权人： Mitsubishi Electric Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Leydig, Voit & Mayer, Ltd.
- 国际申请： PCT/JP2005/021002 WO 20051116
- 国际公布： WO2007/057948 WO 20070524
- 主分类号： B23H7/02
- IPC分类号： B23H7/02 ; H01L21/301 ; H01L21/306 ; B23H9/00
摘要：
Provided are a wire electric discharge machining method for poorly conductive materials, such as solar cell silicon, and a semiconductor wafer manufacturing method and a solar battery cell manufacturing method based on the wire electric discharge machining method. Electrical discharge machining of a high volume resistivity, hard and brittle materials, having a volume resistivity that is equal to or higher than 0.5 Ω·cm and equal to or lower than 5 Ω·cm is performed by applying a pulse voltage having a pulse width that is equal to or higher than 1 μsec and equal to or lower than 4 μsec and having a peak current at the time of machining a wire electrode that is equal to or higher than 10A and equal to or lower than 50A to a wire electrode and generating a discharge pulse between the wire electrode and a subject to be machined.
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