The semiconductor memory device includes a control circuit that performs control of reading data from and writing data into each memory cell. The control circuit includes a flip-flop circuit that stores the data read from the memory cell and stores the data to be written into the memory cell and a dynamic type holding circuit connected to the flip-flop circuit through a switch. The dynamic-type holding circuit temporarily stores the data read from the memory cell. When the data read from the memory cell and then held in the holding circuit is different from the data in the flip-flop circuit to be written, supplied from an outside at a time of writing into the memory cell, control is performed so that the data in the flip-flop circuit is written into the memory cell.