A nonvolatile memory device comprising: a plurality of memory banks, each of which operates independently and includes a plurality of resistance memory cells, each cell including a variable resistive element having a resistance varying depending on stored data; a plurality of global bit lines, each global bit line being shared by the plurality of memory banks; a temperature compensation circuit including one or more reference cells; and a data read circuit which is electrically connected to the plurality of global bit lines and performs a read operation by supplying at least one of the resistance memory cells with a current varying according to resistances of the reference cells.