Invention Grant
US08142673B2 Compositions for dissolution of low-k dielectric films, and methods of use
有权
用于溶解低k电介质膜的组合物及其使用方法
- Patent Title: Compositions for dissolution of low-k dielectric films, and methods of use
- Patent Title (中): 用于溶解低k电介质膜的组合物及其使用方法
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Application No.: US10889597Application Date: 2004-07-12
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Publication No.: US08142673B2Publication Date: 2012-03-27
- Inventor: Donald L Yates
- Applicant: Donald L Yates
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Whyte Hirschboeck Dudek SC
- Main IPC: H01L21/461
- IPC: H01L21/461
Abstract:
An improved composition and method for cleaning the surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon dioxide, a photoresist layer overlying a low-k dielectric layer, or both layers from the surface of a wafer. The composition is formulated according to the invention to provide a desired removal rate of the low-k dielectric and/or photoresist from the surface of the wafer. By varying the fluorine ion component, and the amounts of the fluorine ion component and acid, component, and controlling the pH, a composition can be formulated in order to achieve a desired low-k dielectric removal rate that ranges from slow and controlled at about 50 to about 1000 angstroms per minute, to a relatively rapid removal of low-k dielectric material at greater than about 1000 angstroms per minute. The composition can also be formulated to selectively remove a photoresist layer, leaving the underlying low-k dielectric layer essentially intact.
Public/Granted literature
- US20040253832A1 Compositions for dissolution of low-k dielectric films, and methods of use Public/Granted day:2004-12-16
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