发明授权
- 专利标题: Silicon monoxide vapor deposition material and process for producing the same
- 专利标题(中): 一氧化碳气相沉积材料及其制造方法
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申请号: US11916452申请日: 2006-06-05
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公开(公告)号: US08142751B2公开(公告)日: 2012-03-27
- 发明人: Yoshitake Natsume
- 申请人: Yoshitake Natsume
- 申请人地址: JP Amagasaki-shi
- 专利权人: OSAKA Titanium technologies Co., Ltd.
- 当前专利权人: OSAKA Titanium technologies Co., Ltd.
- 当前专利权人地址: JP Amagasaki-shi
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2005-176244 20050616
- 国际申请: PCT/JP2006/311190 WO 20060605
- 国际公布: WO2006/134792 WO 20061221
- 主分类号: C01B15/14
- IPC分类号: C01B15/14 ; C01B33/20 ; C04B41/50
摘要:
In a powder-sintered type silicon monoxide based evaporating material which is used to form an evaporated film of silicon monoxide, the generation of splash is restrained. Material strength that can resist against the use of the material is ensured. In order to realize these, a starting powder made of precipitating SiO is sintered at 700 to 1000° C. to form an evaporating material. The precipitation of Si is restrained in the step of the sintering. In the measurement thereof by XRD, the peak strength P1 at a Si peak point generated near 2θ=28° and the base strength P2 at the peak point expected from the average strength gradient before and after the peak point satisfies the following: P1/P2≦3. The compression fracture strength of the evaporating material after the material is sintered is raised to 5 MPa or more by selective use of precipitating SiO produced by a vacuum condensing machine.
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