发明授权
US08142846B2 Method of forming phase change material layer using Ge(II) source, and method of fabrication phase change memory device
有权
使用Ge（II）源形成相变材料层的方法和相变存储器件的制造方法
- 专利标题： Method of forming phase change material layer using Ge(II) source, and method of fabrication phase change memory device
- 专利标题（中）： 使用Ge（II）源形成相变材料层的方法和相变存储器件的制造方法
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申请号： US12248964申请日： 2008-10-10
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公开(公告)号： US08142846B2公开(公告)日： 2012-03-27
- 发明人: Byoung-jae Bae , Sung-lae Cho , Jin-il Lee , Hye-young Park , Do-hyung Kim
- 申请人： Byoung-jae Bae , Sung-lae Cho , Jin-il Lee , Hye-young Park , Do-hyung Kim
- 申请人地址： KR Suwon-Si, Gyeonggi-Do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-Si, Gyeonggi-Do
- 代理机构： Volentine & Whitt, PLLC
- 优先权： KR10-2007-0102585 20071011
- 主分类号： C23C16/30
- IPC分类号： C23C16/30 ; H01L21/71
摘要：
In one aspect, a method of forming a phase change material layer is provided. The method includes supplying a reaction gas including the composition of Formula 1 into a reaction chamber, supplying a first source which includes Ge(II) into the reaction chamber, and supplying a second source into the reaction chamber. Formula 1 is NR1R2R3, where R1, R2 and R3 are each independently at least one selected from the group consisting of H, CH3, C2H5, C3H7, C4H9, Si(CH3)3, NH2, NH(CH3), N(CH3)2, NH(C2H5) and N(C2H5)2.
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