Invention Grant
US08143109B2 Method for fabricating damascene interconnect structure having air gaps between metal lines 有权
用于制造在金属线之间具有气隙的镶嵌互连结构的方法

  • Patent Title: Method for fabricating damascene interconnect structure having air gaps between metal lines
  • Patent Title (中): 用于制造在金属线之间具有气隙的镶嵌互连结构的方法
  • Application No.: US12965928
    Application Date: 2010-12-13
  • Publication No.: US08143109B2
    Publication Date: 2012-03-27
  • Inventor: Shuo-Ting Yan
  • Applicant: Shuo-Ting Yan
  • Applicant Address: TW Miao-Li County
  • Assignee: Innolux Display Corp.
  • Current Assignee: Innolux Display Corp.
  • Current Assignee Address: TW Miao-Li County
  • Agency: Altis Law Group, Inc.
  • Priority: TW95143798A 20061127
  • Main IPC: H01L21/82
  • IPC: H01L21/82
Method for fabricating damascene interconnect structure having air gaps between metal lines
Abstract:
An exemplary method for fabricating a damascene interconnect structure includes the following. First, providing a substrate. Second, depositing a multilayer dielectric film on the substrate. Third, forming a patterned photoresist on the multilayer dielectric film. Fourth, etching the multilayer dielectric film to form a plurality of trenches, a portion of each of the trenches having an enlarged width at each of sidewalls thereof. Fifth, filling the trenches with conductive metal to form conductive lines such that air is trapped in extremities of the enlarged width portions of the trenches.
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