Invention Grant
US08143602B2 High-volume manufacturing massive e-beam maskless lithography system
有权
大批量生产大规模电子束无掩模光刻系统
- Patent Title: High-volume manufacturing massive e-beam maskless lithography system
- Patent Title (中): 大批量生产大规模电子束无掩模光刻系统
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Application No.: US12411229Application Date: 2009-03-25
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Publication No.: US08143602B2Publication Date: 2012-03-27
- Inventor: Jeng-Horng Chen , Shy-Jay Lin , Burn Jeng Lin
- Applicant: Jeng-Horng Chen , Shy-Jay Lin , Burn Jeng Lin
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G21K5/08
- IPC: G21K5/08

Abstract:
The present disclosure provides a maskless lithography apparatus. The apparatus includes a plurality of writing chambers, each including: a wafer stage operable to secure a wafer to be written and a multi-beam module operable to provide multiple radiation beams for writing the wafer; an interface operable to transfer wafers between each of the writing chambers and a track unit for processing an imaging layer to the wafers; and a data path operable to provide a set of circuit pattern data to each of the multiple radiation beams in each of the writing chambers.
Public/Granted literature
- US20100248158A1 HIGH-VOLUME MANUFACTURING MASSIVE E-BEAM MASKLESS LITHOGRAPHY SYSTEM Public/Granted day:2010-09-30
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