发明授权
- 专利标题： Charge storage nanostructure
- 专利标题（中）： 电荷储存纳米结构
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申请号： US12450373申请日： 2008-03-26
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公开(公告)号： US08143658B2公开(公告)日： 2012-03-27
- 发明人: Lars Samuelson , Claes Thelander
- 申请人： Lars Samuelson , Claes Thelander
- 申请人地址： SE Lund
- 专利权人： QuNano AB
- 当前专利权人： QuNano AB
- 当前专利权人地址： SE Lund
- 代理机构： The Marbury Law Group, PLLC
- 优先权： SE0700792 20070327
- 国际申请： PCT/SE2008/050334 WO 20080326
- 国际公布： WO2008/118084 WO 20081002
- 主分类号： H01L27/108
- IPC分类号： H01L27/108 ; H01L21/8242
摘要：
The present invention relates to a nanostructured device for charge storage. In particular the invention relates to a charge storage device that can be used for memory applications. According to the invention the device comprise a first nanowire with a first wrap gate arranged around a portion of its length, and a charge storing terminal connected to one end, and a second nanowire with a second wrap gate arranged around a portion of its length. The charge storing terminal is connected to the second wrap gate, whereby a charge stored on the charge storing terminal can affect a current in the second nanowire. The current can be related to written (charged) or unwritten (no charge) state, and hence a memory function is established.
公开/授权文献
- US20110204331A1 CHARGE STORAGE NANOSTRUCTURE 公开/授权日：2011-08-25
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