Invention Grant
- Patent Title: Image sensor having nanodot
- Patent Title (中): 具有纳米点的图像传感器
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Application No.: US12508079Application Date: 2009-07-23
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Publication No.: US08143685B2Publication Date: 2012-03-27
- Inventor: Dae-kil Cha , Young-gu Jin , Bok-ki Min , Yoon-dong Park
- Applicant: Dae-kil Cha , Young-gu Jin , Bok-ki Min , Yoon-dong Park
- Applicant Address: KR Suwon-Si
- Assignee: Samsung Electronics CP., Ltd.
- Current Assignee: Samsung Electronics CP., Ltd.
- Current Assignee Address: KR Suwon-Si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2008-0072438 20080724
- Main IPC: H01L31/0232
- IPC: H01L31/0232

Abstract:
An image sensor includes a plurality of pixels disposed in an array, each pixel comprising a first region and a second region, the first region and the second region separated from each other in a semiconductor layer, and doped with impurities having different conductivities from each other, a photoelectric conversion region formed between the first and second regions, and at least one metal nanodot that focuses an incident light onto the photoelectric conversion region.
Public/Granted literature
- US20100019296A1 IMAGE SENSOR HAVING NANODOT Public/Granted day:2010-01-28
Information query
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