Invention Grant
- Patent Title: Method of operating magnetic random access memory device
- Patent Title (中): 操作磁性随机存取存储器件的方法
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Application No.: US12458411Application Date: 2009-07-10
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Publication No.: US08144504B2Publication Date: 2012-03-27
- Inventor: Kwang-seok Kim , Sun-ae Seo , Kee-won Kim , In-jun Hwang , Hyung-soon Shin , Seung-yeon Lee , Seung-jun Lee
- Applicant: Kwang-seok Kim , Sun-ae Seo , Kee-won Kim , In-jun Hwang , Hyung-soon Shin , Seung-yeon Lee , Seung-jun Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey, & Pierce, P.L.C.
- Priority: KR10-2008-0067205 20080710
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
Provided is a method of operating a magnetic random access memory device comprising a switch structure and a magnetoresistance structure. According to the method, current variation depending on the direction of the current can be reduced by controlling a gate voltage of the switch structure when supplying current to write data to the magnetoresistance structure.
Public/Granted literature
- US20100008130A1 Method of operating magnetic random access memory device Public/Granted day:2010-01-14
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