发明授权
- 专利标题: Programming a flash memory device
- 专利标题(中): 编程闪存设备
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申请号: US12973110申请日: 2010-12-20
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公开(公告)号: US08144519B2公开(公告)日: 2012-03-27
- 发明人: Seiichi Aritome
- 申请人: Seiichi Aritome
- 主分类号: G11C16/06
- IPC分类号: G11C16/06
摘要:
An initial verify read operation is performed after each programming pulse. The verify voltage starts at an initial verify voltage for the first word line and increases for each word line that is verified up to a maximum verify voltage. A second verify read operation is then performed after the program/verify operation. The second verify read operation uses a verify voltage that is substantially close to the maximum verify voltage used during the program/verify step.
公开/授权文献
- US20110096597A1 PROGRAMMING A FLASH MEMORY DEVICE 公开/授权日:2011-04-28
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