发明授权
US08144519B2 Programming a flash memory device 有权
编程闪存设备

  • 专利标题: Programming a flash memory device
  • 专利标题(中): 编程闪存设备
  • 申请号: US12973110
    申请日: 2010-12-20
  • 公开(公告)号: US08144519B2
    公开(公告)日: 2012-03-27
  • 发明人: Seiichi Aritome
  • 申请人: Seiichi Aritome
  • 主分类号: G11C16/06
  • IPC分类号: G11C16/06
Programming a flash memory device
摘要:
An initial verify read operation is performed after each programming pulse. The verify voltage starts at an initial verify voltage for the first word line and increases for each word line that is verified up to a maximum verify voltage. A second verify read operation is then performed after the program/verify operation. The second verify read operation uses a verify voltage that is substantially close to the maximum verify voltage used during the program/verify step.
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