Invention Grant
- Patent Title: Semiconductor structure and method for making same
- Patent Title (中): 半导体结构及其制造方法
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Application No.: US12894190Application Date: 2010-09-30
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Publication No.: US08148257B1Publication Date: 2012-04-03
- Inventor: Hans-Joachim Barth , Gottfried Beer , Joern Plagmann , Jens Pohl , Werner Robl , Rainer Steiner , Mathias Vaupel
- Applicant: Hans-Joachim Barth , Gottfried Beer , Joern Plagmann , Jens Pohl , Werner Robl , Rainer Steiner , Mathias Vaupel
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Infineon Techn AG
- Agent Philip H. Schlazer
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/4763 ; H01L21/469
Abstract:
One or more embodiments relate to a method of forming an electronic device, comprising: providing a workpiece; forming a first barrier layer over the workpiece; forming an intermediate conductive layer over the first barrier layer; forming a second barrier layer over the intermediate conductive layer; forming a seed layer over the second barrier layer; removing a portion of the seed layer to leave a remaining portion of the seed layer and to expose a portion of the second barrier layer; and electroplating a fill layer on the remaining portion of the seed layer.
Public/Granted literature
- US20120080791A1 SEMICONDUCTOR STRUCTURE AND METHOD FOR MAKING SAME Public/Granted day:2012-04-05
Information query
IPC分类:
