Invention Grant
- Patent Title: Resistive memory device and method of fabricating the same
- Patent Title (中): 电阻式存储器件及其制造方法
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Application No.: US12344443Application Date: 2008-12-26
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Publication No.: US08148708B2Publication Date: 2012-04-03
- Inventor: Yun-Taek Hwang , Yu-Jin Lee
- Applicant: Yun-Taek Hwang , Yu-Jin Lee
- Applicant Address: KR Icheon-si, Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si, Gyeonggi-do
- Agency: Lowe Hauptman Ham & Berner, LLP
- Priority: KR10-2008-0110954 20081110
- Main IPC: H01L45/00
- IPC: H01L45/00
Abstract:
A resistive memory device includes a first conductive line on a substrate, a vertical selection diode comprising a nanowire or a nanotube and being arranged over the first conductive line, a resistive element including a resistive layer arranged over the vertical selection diode; and a second conductive line arranged over the resistive element.
Public/Granted literature
- US20100117041A1 RESISTIVE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2010-05-13
Information query
IPC分类:
