发明授权
- 专利标题： Carbon-containing semiconductor substrate
- 专利标题（中）： 含碳半导体衬底
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申请号： US12509339申请日： 2009-07-24
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公开(公告)号： US08148732B2公开(公告)日： 2012-04-03
- 发明人: Chen-Hua Yu , Chia-Lin Yu , Ding-Yuan Chen , Wen-Chih Chiou , Hung-Ta Lin
- 申请人： Chen-Hua Yu , Chia-Lin Yu , Ding-Yuan Chen , Wen-Chih Chiou , Hung-Ta Lin
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing, Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing, Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L33/00
- IPC分类号： H01L33/00
摘要：
A light-emitting diode (LED) device is provided. The LED device is formed on a substrate having a carbon-containing layer. Carbon atoms are introduced into the substrate to prevent or reduce atoms from an overlying metal/metal alloy transition layer from inter-mixing with atoms of the substrate. In this manner, a crystalline structure is maintained upon which the LED structure may be formed.
公开/授权文献
- US20100051965A1 Carbon-Containing Semiconductor Substrate 公开/授权日：2010-03-04
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