Invention Grant
US08148777B1 Structure and fabrication of insulated-gate field-effect transistor with hypoabrupt change in body dopant concentration below source/drain zone
有权
绝缘栅场效应晶体管的结构和制造，体源掺杂浓度低于源极/漏极区域，具有低反变化
- Patent Title: Structure and fabrication of insulated-gate field-effect transistor with hypoabrupt change in body dopant concentration below source/drain zone
- Patent Title (中): 绝缘栅场效应晶体管的结构和制造，体源掺杂浓度低于源极/漏极区域，具有低反变化
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Application No.: US12883147Application Date: 2010-09-15
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Publication No.: US08148777B1Publication Date: 2012-04-03
- Inventor: Constantin Bulucea
- Applicant: Constantin Bulucea
- Applicant Address: US CA Santa Clara
- Assignee: National Semiconductor Corporation
- Current Assignee: National Semiconductor Corporation
- Current Assignee Address: US CA Santa Clara
- Agent Ronald J. Meetin
- Main IPC: H01L29/02
- IPC: H01L29/02
Abstract:
An insulated-gate field-effect transistor (100, 100V, 140, 150, 150V, 160, 170, 170V, 180, 180V, 190, 210, 210W, 500, 510, or 530; or 220, 220W, or 540) is provided with a hypoabrupt vertical dopant profile below one (104; or 264 or 564) of its source/drain zones for reducing the parasitic capacitance along the pn junction between that source/drain zone and adjoining body material (108; or 268 or 568). In particular, the concentration of semiconductor dopant which defines the conductivity type of the body material increases by at least a factor of 10 in moving from that source/drain zone down to an underlying body-material location no more than 10 times deeper below the upper semiconductor surface than that source/drain zone.
Information query
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