A semiconductor device includes a phase division unit, a clock delay unit, a duty cycle correction clock generation unit, and a duty cycle correction voltage generation unit. The phase division unit is configured to divide a phase of a source clock to generate a first division clock. The clock delay unit is configured to delay the first division clock by a delay amount corresponding to a voltage level of a duty cycle correction voltage to output a second division clock. The duty cycle correction clock generation unit is configured to generate a duty cycle correction clock whose logic level changes at respective edges of the first division clock and the second division clock. The duty cycle correction voltage generation unit is configured to generate the duty cycle correction voltage whose voltage level changes depending on a duty cycle of the duty cycle correction clock.