Invention Grant
- Patent Title: Active cycle control circuit for semiconductor memory apparatus
- Patent Title (中): 半导体存储装置的主动周期控制电路
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Application No.: US12411613Application Date: 2009-03-26
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Publication No.: US08149641B2Publication Date: 2012-04-03
- Inventor: Sang-Kwon Lee
- Applicant: Sang-Kwon Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Venable LLP
- Agent Jeffri A. Kaminski
- Priority: KR10-2006-0012814 20060210
- Main IPC: G11C7/00
- IPC: G11C7/00
Abstract:
An active cycle control circuit for a semiconductor memory apparatus is configured to precharge a word line corresponding to a read cycle, and activate a word line corresponding to a refresh request signal in response to the refresh request signal generated during the read cycle.
Public/Granted literature
- US20090185440A1 ACTIVE CYCYLE CONTROL CIRCUIT FOR SEMICONDUCTOR MEMORY APPARATUS Public/Granted day:2009-07-23
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