Invention Grant
US08150140B2 System and method for a semiconductor lithographic process control using statistical information in defect identification 有权
用于半导体光刻过程控制的系统和方法,使用缺陷识别中的统计信息

  • Patent Title: System and method for a semiconductor lithographic process control using statistical information in defect identification
  • Patent Title (中): 用于半导体光刻过程控制的系统和方法,使用缺陷识别中的统计信息
  • Application No.: US12725141
    Application Date: 2010-03-16
  • Publication No.: US08150140B2
    Publication Date: 2012-04-03
  • Inventor: Tadashi KitamuraAkio Ishikawa
  • Applicant: Tadashi KitamuraAkio Ishikawa
  • Applicant Address: JP Tokyo
  • Assignee: NGR Inc.
  • Current Assignee: NGR Inc.
  • Current Assignee Address: JP Tokyo
  • Agency: Lathrop & Gage LLP
  • Priority: JP2008-326258 20081222
  • Main IPC: G06K9/00
  • IPC: G06K9/00
System and method for a semiconductor lithographic process control using statistical information in defect identification
Abstract:
A system and method is described for evaluating a wafer fabrication process for forming patterns on a wafer based upon data. Multiple inspection regions are defined on the wafer for analysis. For each inspection region, images of patterns within the inspection region are captured, edges are detected, and lines are registered to lines of a reference pattern automatically generated from the design data. Line widths are determined from the edges. Measured line widths are analyzed to provide statistics and feedback information regarding the fabrication process. In particular embodiments defects are identified as where measured line widths lie outside boundaries determined from the statistics. In particular embodiments, lines of different drawn width and/or orientation are grouped and analyzed separately. Measured line widths may also be grouped for analysis according to geometry such as shape or proximity to other shapes in the inspection region to provide feedback for optical proximity correction rules.
Information query
Patent Agency Ranking
0/0