Invention Grant
US08153467B2 Semiconductor device with groove structure to prevent molding resin overflow over a light receiving region of a photodiode during manufacture and method for manufacturing same
有权
具有凹槽结构的半导体器件，用于防止在制造期间模制树脂在光电二极管的光接收区域上溢出及其制造方法
- Patent Title: Semiconductor device with groove structure to prevent molding resin overflow over a light receiving region of a photodiode during manufacture and method for manufacturing same
- Patent Title (中): 具有凹槽结构的半导体器件，用于防止在制造期间模制树脂在光电二极管的光接收区域上溢出及其制造方法
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Application No.: US12398520Application Date: 2009-03-05
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Publication No.: US08153467B2Publication Date: 2012-04-10
- Inventor: Shuji Yoneda , Masato Oishi , Tamotsu Shinohara , Shinji Watanabe , Koji Miyata , Seiji Fukae , Kenji Yamauchi , Yoichi Goto , Masakazu Baba
- Applicant: Shuji Yoneda , Masato Oishi , Tamotsu Shinohara , Shinji Watanabe , Koji Miyata , Seiji Fukae , Kenji Yamauchi , Yoichi Goto , Masakazu Baba
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: SNR Denton US LLP
- Priority: JP2008-084568 20080327
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method for manufacturing a semiconductor device, includes the steps of: forming a resin layer on an upper surface of a substrate including a photodiode such that the resin layer does not cover a light receiving region of the photodiode; forming at least one groove in the resin layer so as to surround the light receiving region; and subsequently mold-sealing the photodiode by loading the substrate into a mold and filling the mold with a molding resin.
Public/Granted literature
- US20090243015A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2009-10-01
Information query
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