发明授权
US08153467B2 Semiconductor device with groove structure to prevent molding resin overflow over a light receiving region of a photodiode during manufacture and method for manufacturing same
有权
具有凹槽结构的半导体器件，用于防止在制造期间模制树脂在光电二极管的光接收区域上溢出及其制造方法
- 专利标题： Semiconductor device with groove structure to prevent molding resin overflow over a light receiving region of a photodiode during manufacture and method for manufacturing same
- 专利标题（中）： 具有凹槽结构的半导体器件，用于防止在制造期间模制树脂在光电二极管的光接收区域上溢出及其制造方法
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申请号： US12398520申请日： 2009-03-05
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公开(公告)号： US08153467B2公开(公告)日： 2012-04-10
- 发明人: Shuji Yoneda , Masato Oishi , Tamotsu Shinohara , Shinji Watanabe , Koji Miyata , Seiji Fukae , Kenji Yamauchi , Yoichi Goto , Masakazu Baba
- 申请人： Shuji Yoneda , Masato Oishi , Tamotsu Shinohara , Shinji Watanabe , Koji Miyata , Seiji Fukae , Kenji Yamauchi , Yoichi Goto , Masakazu Baba
- 申请人地址： JP Tokyo
- 专利权人： Sony Corporation
- 当前专利权人： Sony Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： SNR Denton US LLP
- 优先权： JP2008-084568 20080327
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A method for manufacturing a semiconductor device, includes the steps of: forming a resin layer on an upper surface of a substrate including a photodiode such that the resin layer does not cover a light receiving region of the photodiode; forming at least one groove in the resin layer so as to surround the light receiving region; and subsequently mold-sealing the photodiode by loading the substrate into a mold and filling the mold with a molding resin.