Invention Grant
US08154038B2 Group-III nitride for reducing stress caused by metal nitride reflector
有权
III族氮化物，用于减少由金属氮化物反射体引起的应力
- Patent Title: Group-III nitride for reducing stress caused by metal nitride reflector
- Patent Title (中): III族氮化物，用于减少由金属氮化物反射体引起的应力
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Application No.: US12166020Application Date: 2008-07-01
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Publication No.: US08154038B2Publication Date: 2012-04-10
- Inventor: Chen-Hua Yu , Wen-Chih Chiou , Ding-Yuan Chen , Chia-Lin Yu
- Applicant: Chen-Hua Yu , Wen-Chih Chiou , Ding-Yuan Chen , Chia-Lin Yu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L33/00
- IPC: H01L33/00
Abstract:
A device structure includes a substrate; a group-III nitride layer over the substrate; a metal nitride layer over the group-III nitride layer; and a light-emitting layer over the metal nitride layer. The metal nitride layer acts as a reflector reflecting the light emitted by the light-emitting layer.
Public/Granted literature
- US20100001302A1 Group-III Nitride for Reducing Stress Caused by Metal Nitride Reflector Public/Granted day:2010-01-07
Information query
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