发明授权
- 专利标题： Semiconductor device having low dielectric constant film and manufacturing method thereof
- 专利标题（中）： 具有低介电常数薄膜的半导体器件及其制造方法
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申请号： US12412576申请日： 2009-03-27
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公开(公告)号： US08154133B2公开(公告)日： 2012-04-10
- 发明人: Taisuke Koroku , Takeshi Wakabayashi , Osamu Okada , Osamu Kuwabara , Junji Shiota , Nobumitsu Fujii
- 申请人： Taisuke Koroku , Takeshi Wakabayashi , Osamu Okada , Osamu Kuwabara , Junji Shiota , Nobumitsu Fujii
- 申请人地址： JP Tokyo
- 专利权人： Casio Computer Co., Ltd.
- 当前专利权人： Casio Computer Co., Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Holtz, Holtz, Goodman & Chick, PC
- 优先权： JP2008-089674 20080331; JP2008-224341 20080902
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L23/52 ; H01L29/40
摘要：
A low dielectric constant film/wiring line stack structure made up of a stack of low dielectric constant films and wiring lines is provided in a region on the upper surface of the semiconductor substrate except for the peripheral part of this surface. The peripheral side surface of the low dielectric constant film/wiring line stack structure is covered with a sealing film. This provides a structure in which the low dielectric constant films do not easily come off. In this case, a lower protective film is provided on the lower surface of a silicon substrate to protect this lower surface against cracks.