Invention Grant
- Patent Title: Thin film lamination, thin film magnetic sensor using the thin film lamination and method for manufacturing the thin film lamination
- Patent Title (中): 薄膜叠层，使用薄膜层压的薄膜磁传感器和制造薄膜层压体的方法
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Application No.: US12516538Application Date: 2007-11-29
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Publication No.: US08154280B2Publication Date: 2012-04-10
- Inventor: Ichiro Shibasaki , Hirotaka Geka , Atsushi Okamoto
- Applicant: Ichiro Shibasaki , Hirotaka Geka , Atsushi Okamoto
- Applicant Address: JP Osaka
- Assignee: Asahi Kasei Kabushiki Kaisha
- Current Assignee: Asahi Kasei Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JP2006-324573 20061130
- International Application: PCT/JP2007/073058 WO 20071129
- International Announcement: WO2008/066118 WO 20080605
- Main IPC: G01R33/02
- IPC: G01R33/02 ; H01L31/107
Abstract:
Relating to a thin film lamination and a thin film magnetic sensor using the thin film lamination and a method for manufacturing the thin film lamination that realizes a thin film conducting layer having high electron mobility and sheet resistance as an InAsSb operating layer. A thin film lamination is provided which is characterized by having an AlxIn1−xSb mixed crystal layer formed on a substrate, and an InAsxSb1−x (0
Public/Granted literature
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