发明授权
- 专利标题: Fabricating method of electron-emitting device
- 专利标题(中): 电子发射器件的制造方法
-
申请号: US12500610申请日: 2009-07-10
-
公开(公告)号: US08157606B2公开(公告)日: 2012-04-17
- 发明人: Chih-Hao Tsai , Kuan-Jung Chen , Fu-Ming Pan , Chi-Neng Mo , Kuo-Chung Lo , Mei-Tsao Chiang
- 申请人: Chih-Hao Tsai , Kuan-Jung Chen , Fu-Ming Pan , Chi-Neng Mo , Kuo-Chung Lo , Mei-Tsao Chiang
- 申请人地址: TW Taoyuan
- 专利权人: Chunghwa Picture Tubes, Ltd.
- 当前专利权人: Chunghwa Picture Tubes, Ltd.
- 当前专利权人地址: TW Taoyuan
- 代理机构: Jianq Chyun IP Office
- 优先权: TW98105422A 20090220
- 主分类号: H01J9/02
- IPC分类号: H01J9/02
摘要:
A fabricating method of an electron-emitting device is provided. The fabricating method of the electron-emitting device includes at least following procedures. Firstly, a substrate is provided. Next, a first electrode and a second electrode are formed on the substrate. Afterward, a conductive layer covering the first electrode and the second electrode is formed on the substrate. Then, a first conductive layer, a second conductive layer and a gap are formed by patterning the conductive layer. The gap is disposed between the first conductive layer and the second conductive layer. After that, a plasma process is performed at the first conductive layer and second conductive layer.
公开/授权文献
- US20100216366A1 FABRICATING METHOD OF ELECTRON-EMITTING DEVICE 公开/授权日:2010-08-26