Invention Grant
US08158015B2 Fitting methodology of etching times determination for a mask to provide critical dimension and phase control
有权
用于掩模的蚀刻时间确定的拟合方法以提供关键尺寸和相位控制
- Patent Title: Fitting methodology of etching times determination for a mask to provide critical dimension and phase control
- Patent Title (中): 用于掩模的蚀刻时间确定的拟合方法以提供关键尺寸和相位控制
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Application No.: US11686773Application Date: 2007-03-15
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Publication No.: US08158015B2Publication Date: 2012-04-17
- Inventor: Cheng-Ming Lin , Joy Huang
- Applicant: Cheng-Ming Lin , Joy Huang
- Applicant Address: TW Hsin--Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin--Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G01L21/30
- IPC: G01L21/30
Abstract:
The present disclosure provides a mask and a method of determining etching times for etching the mask. In one embodiment, values for a main etching time and an over-etching time are determined simultaneously based on a desired critical dimension (CD) parameter and a desired phase parameter for the mask.
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