- 专利标题: Schottky diode switch and memory units containing the same
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申请号: US12502221申请日: 2009-07-13
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公开(公告)号: US08158964B2公开(公告)日: 2012-04-17
- 发明人: Young Pil Kim , Nurul Amin , Dadi Setiadi , Venugopalan Vaithyanathan , Wei Tian , Insik Jin
- 申请人: Young Pil Kim , Nurul Amin , Dadi Setiadi , Venugopalan Vaithyanathan , Wei Tian , Insik Jin
- 申请人地址: US CA Scotts Valley
- 专利权人: Seagate Technology LLC
- 当前专利权人: Seagate Technology LLC
- 当前专利权人地址: US CA Scotts Valley
- 代理机构: Mueting Raasch & Gebhardt PA
- 主分类号: H01L29/02
- IPC分类号: H01L29/02 ; H01L29/47
摘要:
A switching element that includes a first semiconductor layer, the first semiconductor layer having a first portion and a second portion; a second semiconductor layer, the second semiconductor layer having a first portion and a second portion; an insulating layer disposed between the first semiconductor layer and the second semiconductor layer; a first metal contact in contact with the first portion of the first semiconductor layer forming a first junction and in contact with the first portion of the second semiconductor layer forming a second junction; a second metal contact in contact with the second portion of the first semiconductor layer forming a third junction and in contact with the second portion of the second semiconductor layer forming a fourth junction, wherein the first junction and the fourth junction are Schottky contacts, and the second junction and the third junction are ohmic contacts.