发明授权
- 专利标题： Semiconductor device having strain material
- 专利标题（中）： 半导体器件具有应变材料
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申请号： US12621736申请日： 2009-11-19
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公开(公告)号： US08159009B2公开(公告)日： 2012-04-17
- 发明人: Haining Yang
- 申请人： Haining Yang
- 申请人地址： US CA San Diego
- 专利权人： QUALCOMM Incorporated
- 当前专利权人： QUALCOMM Incorporated
- 当前专利权人地址： US CA San Diego
- 代理商 Sam Talpalatsky; Nicholas J. Pauley; Jonathan T. Velasco
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
A semiconductor device having strain material is disclosed. In a particular embodiment, the semiconductor device includes a first cell including a first gate between a first drain and a first source. The semiconductor device also includes a second cell adjacent to the first cell. The second cell includes a second gate between a second drain and a second source. The semiconductor device further includes a shallow trench isolation area between the first source and the second source. A first amount of strain material over the first source and over the second source is greater than a second amount of strain material over the first drain and over the second drain.
公开/授权文献
- US20110115000A1 Semiconductor Device having Strain Material 公开/授权日：2011-05-19
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