发明授权
- 专利标题： Self aligned silicided contacts
- 专利标题（中）： 自对准硅化物接触
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申请号： US12040409申请日： 2008-02-29
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公开(公告)号： US08159038B2公开(公告)日： 2012-04-17
- 发明人: Roland Hampp
- 申请人： Roland Hampp
- 申请人地址： DE Neubiberg
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Neubiberg
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
Structures and methods of forming self aligned silicided contacts are disclosed. The structure includes a gate electrode disposed over an active area, a liner disposed over the gate electrode and at least a portion of the active area, an insulating layer disposed over the liner. A first contact plug is disposed in the insulating layer and the liner, the first contact plug disposed above and in contact with a portion of the active area, the first contact plug including a first conductive material. A second contact plug is disposed in the insulating layer and the liner, the second contact plug disposed above and in contact with a portion of the gate electrode, the second contact plug includes the first conductive material. A contact material layer is disposed in the active region, the contact material layer disposed under the first contact plug and includes the first conductive material.
公开/授权文献
- US20090218640A1 Self Aligned Silicided Contacts 公开/授权日：2009-09-03
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