发明授权
US08159866B2 Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories
有权
用于提供可用于自旋转移转矩磁存储器中的双磁隧道结的方法和系统
- 专利标题： Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories
- 专利标题（中）： 用于提供可用于自旋转移转矩磁存储器中的双磁隧道结的方法和系统
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申请号： US12609764申请日： 2009-10-30
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公开(公告)号： US08159866B2公开(公告)日： 2012-04-17
- 发明人: Dmytro Apalkov , Vladimir Nikitin , David Druist , Steven M. Watts
- 申请人： Dmytro Apalkov , Vladimir Nikitin , David Druist , Steven M. Watts
- 申请人地址： US CA Milpitas
- 专利权人： Grandis, Inc.
- 当前专利权人： Grandis, Inc.
- 当前专利权人地址： US CA Milpitas
- 代理机构： Convergent Law Group LLP
- 主分类号： G11C11/00
- IPC分类号： G11C11/00 ; G11C5/08 ; G11C11/14 ; G11C11/15
摘要：
A method and system for providing a magnetic junction usable in a magnetic memory are described. The magnetic junction includes first and second pinned layers, first and second nonmagnetic spacer layers, and a free layer. The first pinned layer has a first pinned layer magnetic moment and is nonmagnetic layer-free. The first nonmagnetic spacer layer resides between the first pinned and free layers. The free layer resides between the first and second nonmagnetic spacer layers. The second pinned layer has a second pinned layer magnetic moment and is nonmagnetic layer-free. The second nonmagnetic spacer layer resides between the free and second pinned layers. The first and second pinned layer magnetic moments are antiferromagnetically coupled and self-pinned. The magnetic junction is configured to allow the free layer to be switched between stable magnetic states when a write current is passed through the magnetic junction.
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