发明授权
US08161320B2 Apparatus, memory device controller and method of controlling a memory device
有权
装置,存储装置控制器和控制存储装置的方法
- 专利标题: Apparatus, memory device controller and method of controlling a memory device
- 专利标题(中): 装置,存储装置控制器和控制存储装置的方法
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申请号: US11606900申请日: 2006-12-01
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公开(公告)号: US08161320B2公开(公告)日: 2012-04-17
- 发明人: Jin-Hyuk Kim , Yang-Sup Lee , Young-Gon Kim
- 申请人: Jin-Hyuk Kim , Yang-Sup Lee , Young-Gon Kim
- 申请人地址: KR Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: Harness, Dickey & Pierce, P.L.C.
- 优先权: KR10-2006-0097154 20061002
- 主分类号: G06F11/00
- IPC分类号: G06F11/00
摘要:
An apparatus, memory device controller and method of controlling a memory device are provided. The example apparatus may include a bad block bitmap referencing unit configured to obtain bad block information from a bad block bitmap based on a given memory address, the given memory address being one of a logical memory address and a physical memory address corresponding to the logical memory address, the bad block information indicating whether a given memory block corresponding to the given memory address is a bad block and a memory mapping unit configured to obtain the physical memory address corresponding to the logical memory address, and configured to obtain a reserved physical memory address corresponding to the physical memory address if the bad block information indicates that the given memory block is a bad block. In an example, the apparatus may be embodied as a memory device controller including a flash translation layer (FTL).
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