Invention Grant
- Patent Title: Process for adjusting the size and shape of nanostructures
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Application No.: US12435219Application Date: 2009-05-04
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Publication No.: US08163657B2Publication Date: 2012-04-24
- Inventor: Stephen Y. Chou , Ying Wang , Xiaogan Liang , Yixing Liang
- Applicant: Stephen Y. Chou , Ying Wang , Xiaogan Liang , Yixing Liang
- Agency: Polster, Lieder, Woodruff & Lucchesi, L.C.
- Main IPC: H01L21/477
- IPC: H01L21/477

Abstract:
In accordance with the invention, a lateral dimension of a microscale device on a substrate is reduced or adjusted by the steps of providing the device with a soft or softened exposed surface; placing a guiding plate adjacent the soft or softened exposed surface; and pressing the guiding plate onto the exposed surface. Under pressure, the soft material flows laterally between the guiding plate and the substrate. Such pressure induced flow can reduce the lateral dimension of line spacing or the size of holes and increase the size of mesas. The same process also can repair defects such as line edge roughness and sloped sidewalls. This process will be referred to herein as pressed self-perfection by liquefaction or P-SPEL.
Public/Granted literature
- US20100081282A1 PROCESS FOR ADJUSTING THE SIZE AND SHAPE OF NANOSTRUCTURES Public/Granted day:2010-04-01
Information query
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