发明授权
- 专利标题： CMOS image sensors including backside illumination structure
- 专利标题（中）： CMOS图像传感器包括背面照明结构
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申请号： US12037691申请日： 2008-02-26
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公开(公告)号： US08164126B2公开(公告)日： 2012-04-24
- 发明人: Chang-Rok Moon , Duck-hyung Lee , Seong-ho Cho
- 申请人： Chang-Rok Moon , Duck-hyung Lee , Seong-ho Cho
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Myers Bigel Sibley & Sajovec, P.A.
- 优先权： KR10-2007-0019134 20070226
- 主分类号： H01L31/062
- IPC分类号： H01L31/062
摘要：
An image sensor having a backside illumination structure can include a photo diode unit in a first wafer, where the photo diode unit includes photo diodes and transfer gate transistors coupled to respective ones of the photo diodes. A wiring line unit can be included on a second wafer that is bonded to the photo diode unit, where the wiring line unit includes wiring lines and transistors configured to process signals provided by the photo diode unit and configured to control the photo diode unit. A supporting substrate is bonded to the wiring line unit and a filter unit is located under the first wafer.
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