Invention Grant
- Patent Title: Fuse structure for high integrated semiconductor device
- Patent Title (中): 高集成半导体器件的保险丝结构
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Application No.: US12648254Application Date: 2009-12-28
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Publication No.: US08164156B2Publication Date: 2012-04-24
- Inventor: Kyu Tae Kim , Ki Soo Choi
- Applicant: Kyu Tae Kim , Ki Soo Choi
- Applicant Address: KR Icheon
- Assignee: Hynix Semicondutor Inc.
- Current Assignee: Hynix Semicondutor Inc.
- Current Assignee Address: KR Icheon
- Priority: KR10-2009-0088370 20090918
- Main IPC: H01L23/525
- IPC: H01L23/525 ; H01L21/768
Abstract:
A semiconductor device comprises a fuse having a blowing region at a center part for selectively connecting different two terminals; and a dummy contact positioned under the blowing region for forming empty space by being removed together with the blowing region in a blowing process.
Public/Granted literature
- US20110068432A1 FUSE STRUCTURE FOR HIGH INTEGRATED SEMICONDUCTOR DEVICE Public/Granted day:2011-03-24
Information query
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