发明授权
US08164861B2 Spin torque oscillator sensor employing antiparallel coupled oscilation layers
有权
采用反平行耦合振荡层的旋转扭矩振荡器传感器
- 专利标题: Spin torque oscillator sensor employing antiparallel coupled oscilation layers
- 专利标题(中): 采用反平行耦合振荡层的旋转扭矩振荡器传感器
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申请号: US12636108申请日: 2009-12-11
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公开(公告)号: US08164861B2公开(公告)日: 2012-04-24
- 发明人: Patrick M. Braganca , Bruce A. Gurney
- 申请人: Patrick M. Braganca , Bruce A. Gurney
- 申请人地址: NL Amsterdam
- 专利权人: Hitachi Global Storage Technologies Netherlands B.V.
- 当前专利权人: Hitachi Global Storage Technologies Netherlands B.V.
- 当前专利权人地址: NL Amsterdam
- 代理机构: Zilka-Kotab, PC
- 主分类号: G11B5/39
- IPC分类号: G11B5/39
摘要:
A spin torque magnetoresistive sensor having a very small gap thickness. The sensor operates by measuring the change in frequency of a spin torque induced magnetic oscillation in magnetic layers of the sensor to detect the presence of a magnetic field. The sensor includes a pair of free magnetic layers that are antiparallel coupled by a thin non-magnetic coupling layer there-between. The sensor does not include a pinned layer structure nor an associated AFM pinning layer, which allows the sensor to be constructed much thinner than prior art sensors.
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