Invention Grant
US08164871B2 Circuit for protecting an integrated circuit against elctrostatic discharges in CMOS technology
有权
用于保护集成电路免受CMOS技术中的静电放电的电路
- Patent Title: Circuit for protecting an integrated circuit against elctrostatic discharges in CMOS technology
- Patent Title (中): 用于保护集成电路免受CMOS技术中的静电放电的电路
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Application No.: US12506477Application Date: 2009-07-21
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Publication No.: US08164871B2Publication Date: 2012-04-24
- Inventor: Philippe Galy , Christophe Entringer , Alexandre Dray
- Applicant: Philippe Galy , Christophe Entringer , Alexandre Dray
- Applicant Address: FR Montrouge
- Assignee: STMicroelectronics SA
- Current Assignee: STMicroelectronics SA
- Current Assignee Address: FR Montrouge
- Agency: Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A.
- Priority: FR0855383 20080804
- Main IPC: H02H3/22
- IPC: H02H3/22
Abstract:
The integrated circuit may include at least one electronic protection circuit for protecting against at least one electrostatic discharge and being able to discharge the overvoltage current generated by the electrostatic discharge. The electronic protection circuit includes a controlled short-circuiting switch embodied in CMOS technology including a CMOS technology TRIAC or a CMOS technology thyristor arranged in anti-parallel with a CMOS technology diode, and a triggering circuit for controlling the short-circuiting switch.
Public/Granted literature
- US20100027174A1 CIRCUIT FOR PROTECTING AN INTEGRATED CIRCUIT AGAINST ELECTROSTATIC DISCHARGES IN CMOS TECHNOLOGY Public/Granted day:2010-02-04
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