发明授权
US08164961B2 Nonvolatile semiconductor memory device which can electrically rewrite data and system therefor
失效
可以电重写数据的非易失性半导体存储器件及其系统
- 专利标题： Nonvolatile semiconductor memory device which can electrically rewrite data and system therefor
- 专利标题（中）： 可以电重写数据的非易失性半导体存储器件及其系统
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申请号： US12685982申请日： 2010-01-12
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公开(公告)号： US08164961B2公开(公告)日： 2012-04-24
- 发明人: Mitsuaki Honma
- 申请人： Mitsuaki Honma
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2009-005850 20090114
- 主分类号： G11C7/00
- IPC分类号： G11C7/00 ; G11C7/22
摘要：
A nonvolatile semiconductor memory device includes a memory cell, latch circuits, and an arithmetic operation circuit. The memory cell stores data by a difference in threshold voltage. A read operation is performed twice or more on the memory cell under the same read conditions, and the latch circuits store a plurality of read data. The arithmetic operation circuit takes majority decision of the plurality of data stored in the latch circuits and decides data determined by the majority decision as data stored in the memory cell.