发明授权
US08166231B2 Memory controller, nonvolatile memory device, access device, and nonvolatile memory system
有权
存储控制器,非易失性存储器件,存取器件和非易失性存储器系统
- 专利标题: Memory controller, nonvolatile memory device, access device, and nonvolatile memory system
- 专利标题(中): 存储控制器,非易失性存储器件,存取器件和非易失性存储器系统
-
申请号: US12376648申请日: 2007-08-07
-
公开(公告)号: US08166231B2公开(公告)日: 2012-04-24
- 发明人: Tadashi Ono , Tatsuya Adachi , Masahiro Nakanishi , Takuji Maeda
- 申请人: Tadashi Ono , Tatsuya Adachi , Masahiro Nakanishi , Takuji Maeda
- 申请人地址: JP Osaka
- 专利权人: Panasonic Corporation
- 当前专利权人: Panasonic Corporation
- 当前专利权人地址: JP Osaka
- 代理机构: Greenblum & Bernstein, P.L.C.
- 优先权: JP2006-215940 20060808
- 国际申请: PCT/JP2007/065424 WO 20070807
- 国际公布: WO2008/018446 WO 20080214
- 主分类号: G06F12/00
- IPC分类号: G06F12/00 ; G06F12/02
摘要:
The access device 100 designates a file ID without relating different address spaces of an access device 100 and a nonvolatile memory device 200 with each other and manages a data storing state only in a physical address space in the nonvolatile memory device 200. The access device 100 sends a transfer rate to the nonvolatile memory device 200 by using a transfer rate sending part 121. A filling rate calculation part 251 calculates a filling rate of physical block corresponding to a guaranteed speed required by the access device 100. A remaining capacity corresponding to the transfer rate is obtained by using the calculated filling rate and is sent to a remaining capacity receiving part 122 of the access device 100.
公开/授权文献
信息查询