Invention Grant
- Patent Title: Method for producing an object at least partly with a silicon carbide structure from a blank of a carbon-containing material
- Patent Title (中): 至少部分地由含碳材料坯料制造碳化硅结构的方法
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Application No.: US12312741Application Date: 2007-11-22
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Publication No.: US08168116B2Publication Date: 2012-05-01
- Inventor: Siegmund Greulich-Weber , Bettina Friedel
- Applicant: Siegmund Greulich-Weber , Bettina Friedel
- Applicant Address: DE Paderborn
- Assignee: Universitaet Paderborn
- Current Assignee: Universitaet Paderborn
- Current Assignee Address: DE Paderborn
- Agency: Collard & Roe, P.C.
- Priority: DE102006055469 20061123
- International Application: PCT/DE2007/002119 WO 20071122
- International Announcement: WO2008/061521 WO 20080529
- Main IPC: B28B3/00
- IPC: B28B3/00

Abstract:
The invention relates to a method for production of an object with an at least partly silicon carbide structure from a blank of a carbon-containing material, wherein, in a first step, the object made from the carbon-containing material is produced essentially in the desired end form and/or end size, the object made from the carbon-containing material is then at least partly enveloped in a carbon-rich silicon dioxide granulate and then fired at least once in the envelope in a protective gas atmosphere such that the silicon dioxide granulate gives off gas containing silicon carbide which diffuses into the object and the carbon-containing material is completely or partly converted into silicon carbide. The invention further relates to a method for producing an object with an at least partly silicon carbide structure from a blank made from a carbon-containing material or a porous silicon carbide in which the pre-made object is infiltrated with a precursor sol containing silicon and carbon and fired at least once in a protective gas atmosphere at a firing temperature for carrying out a carbothermal reduction, wherein the infiltrated precursor sol gives off a gas containing silicon carbide which converts the material of the object partly or completely into silicon carbide.
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