发明授权
- 专利标题： Vertical light emitting diode and method of manufacturing the same
- 专利标题（中）： 垂直发光二极管及其制造方法
-
申请号： US12466086申请日： 2009-05-14
-
公开(公告)号： US08168454B2公开(公告)日： 2012-05-01
- 发明人: Su Yeol Lee , Sang Ho Yoon , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
- 申请人： Su Yeol Lee , Sang Ho Yoon , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
- 申请人地址： KR Gyunggi-do
- 专利权人： Samsung LED Co., Ltd.
- 当前专利权人： Samsung LED Co., Ltd.
- 当前专利权人地址： KR Gyunggi-do
- 代理机构： McDermott Will & Emery LLP
- 优先权： KR10-2006-0102967 20061023
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
Provided is a vertical LED including an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having a surface coming in contact with the n-electrode, the surface having a Ga+N layer containing a larger amount of Ga than that of N; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer; a p-electrode formed under the p-type GaN layer; and a structure support layer formed under the p-electrode.