A method for manufacturing a resin-embedded semiconductor light-emitting device that is capable of preventing a semiconductor film from being damaged when a growth substrate is delaminated using a laser lift-off method, and that is capable of preventing foreign matter from adhering to the semiconductor film when a resin material is applied. A laser exposure step to delaminate the growth substrate from the semiconductor film comprises a first laser exposure step for performing laser exposure at an energy density at which the resin is broken down but the semiconductor film is not broken down, in a range including a portion adjacent to at least one section of the semiconductor film divided by dividing grooves and at least one section of resin, and a second exposure step for performing laser exposure at an energy density at which the semiconductor film can be broken down in a range including at least one section.