Invention Grant
US08168469B2 Nonvolatile memory device made of resistance material and method of fabricating the same
有权
由电阻材料制成的非易失性存储器件及其制造方法
- Patent Title: Nonvolatile memory device made of resistance material and method of fabricating the same
- Patent Title (中): 由电阻材料制成的非易失性存储器件及其制造方法
-
Application No.: US12923429Application Date: 2010-09-21
-
Publication No.: US08168469B2Publication Date: 2012-05-01
- Inventor: Jung-hyun Lee , Sung-kyu Choi , Kyu-sik Kim
- Applicant: Jung-hyun Lee , Sung-kyu Choi , Kyu-sik Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2005-0008752 20050131
- Main IPC: H01L29/02
- IPC: H01L29/02
Abstract:
A nonvolatile memory device using a resistance material and a method of fabricating the same are provided. The nonvolatile memory device includes a switching element, and a data storage part electrically connected to the switching element. In the data storage part, a lower electrode is connected to the switching element, and an insulating layer is formed on the lower electrode to a predetermined thickness. The insulating layer has a contact hole exposing the lower electrode. A data storage layer is filled in the contact hole and the data storage layer is formed of transition metal oxide. An upper electrode is formed on the insulating layer and the data storage layer.
Public/Granted literature
- US20110008945A1 Nonvolatile memory device made of resistance material and method of fabricating the same Public/Granted day:2011-01-13
Information query
IPC分类:
