Invention Grant
- Patent Title: Semiconductor device and manufacturing method of a semiconductor device
- Patent Title (中): 半导体装置及半导体装置的制造方法
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Application No.: US12712604Application Date: 2010-02-25
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Publication No.: US08168471B2Publication Date: 2012-05-01
- Inventor: Takashi Kanda , Kenji Fukuzono
- Applicant: Takashi Kanda , Kenji Fukuzono
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Fujitsu Patent Center
- Priority: JP2006-086533 20060327
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/48
Abstract:
A semiconductor device includes a multi-layer substrate and a semiconductor element mounted on the multi-layer substrate. The multi-layer substrate contains a plurality of circuit-formation layers joined by a first resin material. The semiconductor element is mounted on the multi-layer substrate by being joined to the multi-layer substrate by a second resin material. The first resin material and the second resin material are curable in the same heating condition.
Public/Granted literature
- US20100151632A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE Public/Granted day:2010-06-17
Information query
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