发明授权
US08168489B2 High performance stress-enhanced MOSFETS using Si:C and SiGe epitaxial source/drain and method of manufacture
有权
使用Si：C和SiGe外延源/漏极的高性能应力增强MOSFETs及其制造方法
- 专利标题： High performance stress-enhanced MOSFETS using Si:C and SiGe epitaxial source/drain and method of manufacture
- 专利标题（中）： 使用Si：C和SiGe外延源/漏极的高性能应力增强MOSFETs及其制造方法
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申请号： US11782429申请日： 2007-07-24
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公开(公告)号： US08168489B2公开(公告)日： 2012-05-01
- 发明人: Huajie Chen , Dureseti Chidambarrao , Omer H. Dokumaci
- 申请人： Huajie Chen , Dureseti Chidambarrao , Omer H. Dokumaci
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Roberts Mlotkowski Safran & Cole, P.C.
- 代理商 Joseph P. Abate
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L21/336
摘要：
A semiconductor device and method of manufacturing a semiconductor device. The semiconductor device includes channels for a pFET and an nFET. A SiGe layer is selectively grown in the source and drain regions of the pFET channel and a Si:C layer is selectively grown in source and drain regions of the nFET channel. The SiGe and Si:C layer match a lattice network of the underlying Si layer to create a stress component. In one implementation, this causes a compressive component in the pFET channel and a tensile component in the nFET channel.
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