Invention Grant
US08168519B2 Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces
有权
等离子体浸没离子注入方法，在室内表面上使用纯的或接近纯的硅调味层
- Patent Title: Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces
- Patent Title (中): 等离子体浸没离子注入方法，在室内表面上使用纯的或接近纯的硅调味层
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Application No.: US13101843Application Date: 2011-05-05
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Publication No.: US08168519B2Publication Date: 2012-05-01
- Inventor: Shijian Li , Kartik Ramaswamy , Hiroji Hanawa , Seon-Mee Cho , Biagio Gallo , Dongwon Choi , Majeed A. Foad
- Applicant: Shijian Li , Kartik Ramaswamy , Hiroji Hanawa , Seon-Mee Cho , Biagio Gallo , Dongwon Choi , Majeed A. Foad
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agent Robert M. Wallace
- Main IPC: H01L21/425
- IPC: H01L21/425
Abstract:
Plasma immersion ion implantation employing a very high RF bias voltage on an electrostatic chuck to attain a requisite implant depth profile is carried out by first depositing a partially conductive silicon-containing seasoning layer over the interior chamber surfaces prior to wafer introduction.
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