Invention Grant
- Patent Title: Low-voltage image sensor with sensing control unit formed within
- Patent Title (中): 低压图像传感器与感应控制单元组成
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Application No.: US11932922Application Date: 2007-10-31
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Publication No.: US08169010B2Publication Date: 2012-05-01
- Inventor: Mi Jin Kim , Bong Ki Mheen , Young Joo Song , Seong Su Park
- Applicant: Mi Jin Kim , Bong Ki Mheen , Young Joo Song , Seong Su Park
- Applicant Address: KR Daejeon
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR Daejeon
- Agency: Rabin & Berdo, P.C.
- Priority: KR10-2006-0112519 20061115; KR10-2007-0075244 20070726
- Main IPC: H01L31/00
- IPC: H01L31/00

Abstract:
Provided are an image sensor and a method of sensing the same. The image sensor includes: a light receiving device; a signal conversion unit including a transfer transistor having a plurality of transfer gates and for converting photocharges generated by the light receiving device into a voltage to output the voltage; and a sensing control unit for generating at least two reset signals and/or at least two transfer signals applied to the transfer gates of the transfer transistor during a one-time photosensing cycle. The image sensor is obtained by changing the structure and driving method of a transfer transistor of a typical 4-transistor CMOS image sensor and employs a deep depletion operation and a multiple reset operation, thereby reducing an image lag and increasing the well capacity of the light receiving device.
Public/Granted literature
- US20080111170A1 LOW-VOLTAGE IMAGE SENSOR AND SENSING METHOD THEREOF Public/Granted day:2008-05-15
Information query
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