发明授权
- 专利标题: Field emission device
- 专利标题(中): 场发射装置
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申请号: US13051262申请日: 2011-03-18
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公开(公告)号: US08169134B2公开(公告)日: 2012-05-01
- 发明人: Hyun-seung Cho , Hak-cheol Yang , Jun-ho Sung , Ki-bum Seong
- 申请人: Hyun-seung Cho , Hak-cheol Yang , Jun-ho Sung , Ki-bum Seong
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si
- 代理机构: Sughrue Mion, PLLC
- 优先权: KR10-2010-0026409 20100324
- 主分类号: H01J63/04
- IPC分类号: H01J63/04
摘要:
A field emission device includes: a first substrate on which a gate electrode line, a cathode line, and an electron emission source are formed; a second substrate disposed to face the first substrate, and on which an anode and a phosphor layer are formed; and a side frame surrounding an area between the first substrate and the second substrate, and forming a sealed internal space, wherein the first substrate and the second substrate respectively comprise a first protrusion part and a second protrusion part that protrude outside the side frame in the same direction, wherein a rear terminal part for applying a voltage to the gate electrode line and the cathode line is formed on the first protrusion part, wherein an anode terminal for applying a voltage to the anode is formed on the second protrusion part.
公开/授权文献
- US20110234086A1 FIELD EMISSION DEVICE 公开/授权日:2011-09-29
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