发明授权
- 专利标题: Magnetoresistive sensor having a structure for activating and deactivating electrostatic discharge prevention circuitry
- 专利标题(中): 具有用于激活和去激活静电放电防止电路的结构的磁阻传感器
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申请号: US11426908申请日: 2006-06-27
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公开(公告)号: US08169751B2公开(公告)日: 2012-05-01
- 发明人: Thomas Robert Albrecht , Robert E. Fontana, Jr. , Bruce Alvin Gurney , Timothy Clark Reiley , Xiao Z. Wu
- 申请人: Thomas Robert Albrecht , Robert E. Fontana, Jr. , Bruce Alvin Gurney , Timothy Clark Reiley , Xiao Z. Wu
- 申请人地址: NL Amsterdam
- 专利权人: Hitachi Global Storage Technologies Netherlands B.V.
- 当前专利权人: Hitachi Global Storage Technologies Netherlands B.V.
- 当前专利权人地址: NL Amsterdam
- 代理机构: Zilka-Kotab, PC
- 主分类号: G11B5/33
- IPC分类号: G11B5/33 ; G11B5/127
摘要:
A structure for preventing Electrostatic Discharge (LSD) damage to a magnetoresistive sensor during manufacture. The structure includes a switching element that can be switched off during testing of the sensor and then switched back on to provide ESD shunting to the sensor. The switch can be a thermally activated mechanical relay built onto the slider. The switch could also be a programmable resistor that includes to solid electrolyte sandwiched between first and second electrodes. One of the electrodes functions as an anode. When voltage is applied in a first direction an ion bridge forms across through the electrolyte across electrodes making the resistor conductive. When a voltage is applied in a second direction, the ion bridge recedes and the programmable resistor becomes essentially non-conductive.