发明授权
US08169753B2 Current-perpendicular-to-plane (CPP) read sensor with ferromagnetic amorphous buffer and polycrystalline seed layers
有权
电流垂直平面(CPP)读取传感器与铁磁非晶缓冲和多晶种子层
- 专利标题: Current-perpendicular-to-plane (CPP) read sensor with ferromagnetic amorphous buffer and polycrystalline seed layers
- 专利标题(中): 电流垂直平面(CPP)读取传感器与铁磁非晶缓冲和多晶种子层
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申请号: US12276003申请日: 2008-11-21
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公开(公告)号: US08169753B2公开(公告)日: 2012-05-01
- 发明人: Tsann Lin
- 申请人: Tsann Lin
- 申请人地址: NL Amsterdam
- 专利权人: Hitachi Global Storage Technologies Netherlands B.V.
- 当前专利权人: Hitachi Global Storage Technologies Netherlands B.V.
- 当前专利权人地址: NL Amsterdam
- 代理机构: Zilka-Kotab, PC
- 主分类号: G11B5/39
- IPC分类号: G11B5/39
摘要:
A current-perpendicular-to-plane (CPP) tunneling magnetoresistance (TMR) or giant magnetoresistance (GMR) read sensor with ferromagnetic amorphous buffer and polycrystalline seed layers is disclosed for reducing a read gap, in order to perform magnetic recording at higher linear densities. The ferromagnetic amorphous buffer and polycrystalline seed layers couples to a ferromagnetic lower shield, thus acting as part of the ferromagnetic lower shield and defining the upper surface of the ferromagnetic polycrystalline seed layer as the lower bound of the read gap. In addition, a CPP TMR or GMR read sensor with nonmagnetic and ferromagnetic cap layers is also disclosed for reducing the read gap, in order to perform magnetic recording at even higher linear densities. The ferromagnetic cap layer couples to a ferromagnetic upper shield, thus acting as part of the ferromagnetic upper shield and defining the lower surface of the ferromagnetic cap layer as the upper bound of the read gap.
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